Spin dependent transport in ferromagnet/superconductor/ferromagnet single electron transistor
نویسندگان
چکیده
منابع مشابه
Nonequilibrium spin distribution in single-electron transistor
Single-electron transistor with ferromagnetic outer electrodes and nonmagnetic island is studied theoretically. Nonequilibrium electron spin distribution in the island is caused by tunneling current. The dependencies of the magnetoresistance ratio δ on the bias and gate voltages show the dips which are directly related to the induced separation of Fermi levels for electrons with different spins...
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Single-electron transistor with ferromagnetic outer electrodes and a nonmagnetic island is studied theoretically. Nonequilibrium electron-spin distribution in the island is caused by tunneling current. The dependences of the magnetoresistance ratio d on the bias and gate voltages show the dips which are directly related to the induced separation of Fermi levels for electrons with different spin...
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ژورنال
عنوان ژورنال: Journal of Applied Physics
سال: 2005
ISSN: 0021-8979,1089-7550
DOI: 10.1063/1.1850331